Charge transfer and Fermi level shift in p-doped single-walled carbon nanotubes
نویسندگان
چکیده
The electronic properties of p-doped single-walled carbon nanotube SWNT bulk samples were studied by temperature-dependent resistivity and thermopower, optical reflectivity, and Raman spectroscopy. These all give consistent results for the Fermi level downshift EF induced by doping. We find EF 0.35 eV and 0.50 eV for concentrated nitric and sulfuric acid doping respectively. With these values, the evolution of Raman spectra can be explained by variations in the resonance condition as EF moves down into the valence band. Furthermore, we find no evidence for diameter-selective doping, nor any distinction between doping responses of metallic and semiconducting tubes.
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